Charge carrier properties of single-crystal CVD diamond up to 473 K
نویسندگان
چکیده
The drift behavior of charge carriers, generated by α -particles a reference 241 Am-source, in electronic grade, single crystal chemical vapor deposition (scCVD) diamond was investigated the transient current technique (TCT) from room temperature up to ≈ 473 K . Furthermore, -spectroscopic analyzed terms collection and spectroscopic resolution for same range. All conducted measurements revealed complete maximum temperature. electron–hole-pair creation energies were derived TCT as well measurements. herein presented results imply that high -spectroscopy with diamond-based semiconductor solid state detectors, using presently available scCVD sensor substrates, is feasible at least Only highest applied temperature, showed distorted signal traces, indicating uniform positive space built-up.
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research
سال: 2021
ISSN: ['1872-9576', '0168-9002']
DOI: https://doi.org/10.1016/j.nima.2020.164947